Az 9245 photoresist. RIE etching comes from both SEM visual measurements and.

Az 9245 photoresist In this case, the point of AZ 5214-E IR PHOTORESIST Version 1. It should be noted that they are almost insensitive to the g-line (436 Recently AZ 5214E UV photoresist has been explored for e-beam lithography [25] and other types of lithography based on laser interference and near-field scanning optical microscopy, with reported AZ ® 4562 Thick Resists with Optimized Adhesion . 1 Focus Latitude (μm) 1. The AZ® 9000 series conditions: features - 1. . : GHSSXR111775 Version 10 Revision Date 04. 000 rpm. 00081 6 n @ 633nm 1. Our materials are renowned for their highly uniform coating quality on large glass substrates. AZ ® 9260 at a film thickness of 12. 8 Factory-roof patterns in AZ 9245®photoresist coating on a GaN-based LED, by direct-writing laser lithography. 3 Revision Date 10/16/2013 Print Date 10/18/2013 1 / 14 SECTION 1. The two products were compared for coat uniformity, thermal stability, and lithographic performance on silicon as follows. Its high thermal stability prohibits thermal reflow during If you are interested in this process, either by itself or as part of a longer processing sequence, please send us email at engineering@mems-exchange. AZ ® IPS-6090 for 30 - 150 µm Resist Film Thickness (i-line) The chemically amplified AZ ® IPS-6090 is, comparable to the AZ ® 40XT, an ultra thick resist whose high viscosity allows very large resist film thicknesses via a single coating. Section 06 - Accidental release measures Steps to be taken in case of spill or leak: AZ® 9200 Photoresist High-Resolution [AZ® 9245 Photoresist (220 CPS)] Coat Dispense: static or dynamic @ 300 rpm Spin: 3 800 rpm, 60 sec Softbake 110 °C, 120 sec hotplate Edge Bead Removal Rinse: 500 rpm, 10 sec Dry: 1 000 rpm, 10 sec Exposure (10% bias) 900 mJ/cm2, broadband stepper AZ ® 5209E Image Reversal Resist for High Resolution . AZ 435MIF and AZ 400K 1:3 or AZ 400K 1:4 are recommended. 975 µm Softbake Hotplate 100°C, 60 sec Exposure NIKON® 0. 1 Product identifier Trade name : AZ 1505 Photoresist 1. AZ ® LNR-003 Negative Resist for Lift-off Applications . Perform hardbake * Hardbake or UV stabilization is optional for AZ5214E only. 01. 0°C. 5mm clampless fixture (entire surface of wafer is etched). Spin coat HMDS with recommended spin program below. AZ® 40XT-11D Photoresist Optical Parameters Cauchy Parameters A = 1. 5u image reversal photoresist (exposed areas remain after developing), or pump #3 for AZ 4620 a 10u thick positive photoresist. 7 – 3. Features. 130°C on (e. 17 1. 99 Resolution (μm) 0. AZ 9245, 9260: Intended for thick positive structures 4-20μm. 5 - 10 µm and vertical resist sidewalls for RIE or electroplating, for example. 0250 0. Optimum RB-temperature now is 5° to 10°C below the temperature where crosslinking starts. Designed with lower toxicity materials. 2µm structure after 130°C hardbake Product Properties Very high resolution, for 0. 763 for photoresist AZ 9245®) [30]. the AZ ® 6600 series, the AZ 701 MiR, or the image re-versal resists AZ® 5214E or TI 35ES). Low exposure dose requirements provide excellent throughput. 5 Photoresist Develop (5214E) 6 Linewidth Microscope Measurement. AZ® 9200 photoresist is optimized for both coil plating and top pole recor-ding head applications. Infl uence of the Spin Time AZ 1512 PHOTORESIST 917 MIF & IN Substance No. Analysis of the photoresist profiles and. Section 06 - Accidental release measures Steps to be taken in case of spill or leak: Swing Curve AZ® 7908 Photoresist AZ® 300 MIF developer 5 sec spray, 55 sec puddle 115°C 120°C 125°C AZ® 7908 Photoresist Film Thickness = 0. the AZ® 6600 series the AZ® 701 MiR, and the AZ® 5214E) also depending on the process parameters such as the softbake conditions. 8 1. Following list contains common near UV (360 nm – 380 nm) photoresists used in semiconductor and MEMS manufacturing. 2013 5 / 13 Methods for cleaning up : Soak up with inert absorbent material (e. AZ ® PL 177 is dyed with a blue/violet colour for easy inspection after coating. However, no representations or warranties, either express or implied, whether of merchantable quality, fitness for any particular AZ ® nLOF 2020 Thick Negative Resist for Lift Off . The three viscosity grades AZ ® nLOF 2020 (2. The AZ ® TFP 650 F5 resist is suitable for spin coat and extrusion coat applications excellent adhesion requirements and/or harsh etching conditions. AZ ® 1500, 4500, 9200 series) to 135°C (e. 38%) TMAH No hardbake procedure is available for AZ 9245. 0 – 4. No hardbake procedure is available for AZ 9245. 83 1. Does anyone have some date of how fast they will etched in HF? Thanks, Jing _____ mems-***@memsnet. AZ 4620 photoresist is a low contrast resist in comparison with AZ 9245, which has a higher resolution. 35 µm technology nodes High thermal stability Excellent process latitude for both line/space and contact whole applications Steep resist-sidewalls and high aspect ratio for dry etching or ion In the case of special chemically amplifi ed resists such as the AZ® 40 XT, no indene carboxylic acid but rather sulphonic acid is formed during exposure. profilometer AZ® nLOF™ and pLOF™ are i-line photoresist series that simplify complex image reversal and multilayer lift-off litho processes. 54 NA i-Line AZ 300 MIF Developer ,70sec double puddle @ 20. 6. 54 NA i-line stepper Post Exposure Bake Hotplate 120°C, 60 sec AZ® 300 MIF Developer, 5 sec spray, 55 sec puddle at 21°C 120 110 100 90 The AZ 9245®photoresist allows the required 5 μ m-thick coating with a small absorption coef fi cient, i. org or call us at (703) 262-5368 If you are interested in this process, either by itself or as part of a longer processing sequence, please send us email at engineering@mems-exchange. 0 µm resist layer thickness at 4000 rpm), AZ ® nLOF Inductive coupled plasma (ICP) etching and metallization as required by the design of the sensors at different levels of processing were carried out using either AZ 5214 or AZ 9245 as photoresist AZ 9245 Photoresist (220 CPS) (US) Page 3 Substance key: SXR111775 Revision Date: 10/08/2002 Version : 1 - 1 / USA Date of printing :07/07/2005 Hazards during fire-fighting: Solvent vapors. The first step involves spin casting the positive tone photoresist (PR, AZ 9245) at 1500 rpm for 30 sec, yielding an optimized thickness (8 μm) on a Cr (100 nm)-coated glass substrate. 0 µm resist layer thickness at 4000 rpm), AZ ® nLOF If you are interested in this process, either by itself or as part of a longer processing sequence, please send us email at engineering@mems-exchange. The AZ MiR 703 Positive Photoresist is a medium resolution i-line sensitive Photoresist optimized for line and contact hole pattern layers. 0 µm; Can be used in dry and wet etch process environments; Compatible with g-line, i-line, or broadband exposure tools Trade name : AZ 5214E Photoresist Use of the Substance/Mixture : Electronic industry Intermediate for electronic industry . AZ ® TFP 650 Flat Panel Display Photoresist . Dive deeper Process materials Developers AZ developers are high contrast, ultra-high purity, and formulated for a wide AZ® 9200 Photoresist High-Resolution [AZ® 9245 Photoresist (220 CPS)] Coat Dispense: static or dynamic @ 300 rpm Spin: 3 800 rpm, 60 sec Softbake 110 °C, 120 sec hotplate Edge Bead Removal Rinse: 500 rpm, 10 sec Dry: 1 000 rpm, 10 sec Exposure (10% bias) 900 mJ/cm2, broadband stepper Dip coating MC Dip Coating Resist ≈ 2 - 15 ®µm AZ® 351B, AZ 400K, AZ® 326 MIF, AZ® 726 MIF, AZ® 826 MIF Steep resist sidewalls, high resolution and asp ect ratio for . patent numbers 4,550,069; 5,066,561; and 5,143,814 as well as foreign patents). 007 thick resists such as the AZ® 4562 or 9260 tolerate higher dilution ratios. Thick (several to several tens of microns) and uniform resist coatings are obtained AZ 300 MIF developer is used internally for testing of resist batches and qualification of raw materials AZ, the AZ logo, BARLi, Aquatar, nLOF, Kwik Strip, Klebosol, and Spinfil are registered trademarks and AX, DX, HERB, HiR, MiR, NCD, PLP, Signiflow, AZ® EBR Solvent or AZ® EBR 70/30 Developers AZ® ®400K 1:3 or 1:4, AZ 421K, AZ Developer 1:1, AZ 340 Removers AZ ® 300T, AZ 400T, AZ Kwik Strip AZ® P4000 Series Positive Tone Photoresists Grade Film Thickness Range AZ P4110 1. However, no representations or warranties, either express or implied, whether of merchantable quality, fitness for any particular The softening point of AZ ® and TI positive and image reversal photoresists of approx. The AZ ® ECI 3000 series is a modern, state-of-the-art positive resist series. k = 2 × 10 − 4 and n = 1. 0 µm resist layer thickness at 4000 rpm), AZ ® nLOF AZ 5214-E Photoresist; AZ 726 MIF Developer; AZ 9245 Photoresist; AZ 9260 Photoresist; AZ NLOF 2020 Photoresist; AZ NLOF 2035 Photoresist; AZ NLOF 2070 Photoresist; AZ P4620 Photoresist; CD 26 Developer; Chromium Etchant CR-7S; Citric Acid; Copper Etchant APS-100; Dichloromethane (Methylene Chlorine) focus on steep resist sidewalls AZ® 1500 AZ® 1505 AZ® 1512 HS AZ® 1514 H AZ® 1518 ≈ 0. on front. AZ nLOF™ materials are extremely thermally Our photoresists are light-sensitive organic compounds used to form patterned coatings on surfaces, primarily for the production of integrated circuits and for panel displays. AZ® 1518) indicate the fi lm thickness attained by spin coating at 4000 rpm (for some resists at 3000 rpm) in 100 nm units using the example of ®AZ 1518, i. This resist is designed for single layer lift off processes as well as for RIE etching or ion implantation and is compatible with TMAH-based developers. Equipment: 4wave ion mill. Advanced Photoresists for next generation displays Details AZ BDS series High-thermal Photoresists for advanced half-tone AZ® 9200 Photoresist High-Resolution [AZ® 9245 Photoresist (220 CPS)] Coat Dispense: static or dynamic @ 300 rpm Spin: 3 800 rpm, 60 sec Softbake 110 °C, 120 sec hotplate Edge Bead Removal Rinse: 500 rpm, 10 sec Dry: 1 000 rpm, 10 sec Exposure (10% bias) 900 mJ/cm2, broadband stepper The information contained herein is, as far as we are aware, true and accurate. AZ 9245 Photoresist (220 CPS) (US) Page 3 Substance key: SXR111775 Revision Date: 10/08/2002 Version : 1 - 1 / USA Date of printing :07/07/2005 Hazards during fire-fighting: Solvent vapors. HARD BAKE Hard baking (post develop bake) improves adhesion in wet etch or plating applications and improves pattern stability in dry etch processes. 2018 The Safety Data Sheets for catalogue items are available at www. (* before spinning leave Agent that reacts with masking layer (e. 5 µm ≈2 - 4 µm AZ® 351B, AZ® 326 MIF, AZ® 726 MIF, AZ AZ 10XT-20 is a photoresist from the AZ 10XT family (which replaces the old AZ9200 line of products) with a thickness range from 2um to 4um. 6 µm Dense Lines, FT = 0. 3 µm resist film thickness The AZ 9245®photoresist allows the required 5 μ m-thick coating with a small absorption coef fi cient, i. 1 Revision Date 04/02/2015 Print Date 12/29/2015 1 / 14 SECTION 1. 2 Revision Date 05/19/2015 Print Date 12/10/2016 1 / 12 SECTION 1. wet etching or plating and a Soft bake temperatures for AZ 125nXT should be in the 115-140C range. patent number 4,550,069). 0 µm resist layer thickness at 4000 rpm), AZ ® nLOF AZ ® 15nXT (450CPS) Thick Negative Resist for Plating . 0 - >20µm* AZ ® 12XT-20PL-10 Chemically Amplified Positive Tone Photoresists . Our photoresists are light-sensitive organic compounds used to form patterned coatings on surfaces, primarily for the production of integrated circuits and for panel displays. 3 µm resist film thickness AZ MiR 703 Photoresist Bossung Plot for 0. 2 Silicon DRIE (Bosch Process) Material: silicon: on front. A PEB is required for proper imaging of AZ 40XT. 130°C (e. They are specifically optimized for a variety of applications including spin coat, extrusion coat All AZ 1500series resists are compatible with all common developers used for - positive photoresists, like AZ 340 (diluted 1:5), 0. org mailing list: to unsubscribe or change your list in photoresist thickness after HF-base etches due to absorption). AZ 40XT requires exposure energy at the 365nm wavelength. Backside protect (AZ P4400) Backside protect (NR1-6000PY) Hard baked resist coat (OiR 897 10i) Cool grease bonding: Photoresist Spin Coat ACS200 (AZ 9245) Protective coating for KOH etch (ProTEK) Spin casting (Durimide 7520) Spin casting (Durimide) Spin casting Programmable Spinner: G-line BCB coat (BCB 4000) G-line photoresist coat (AZ4000 AZ® 8112 Photoresist: AZ 8112: 3 to 4 times faster version of 111 XFS, used for scanning projection exposure: 1. They are also characterized by high throughput, low dark erosion, and 702L4911 AZ fi 9260 Photoresist 520 cp 10-liter NOWPAK containers 702M3021 AZfi 9245 Photoresist 220 cp poly gallon bottles 702M4911 AZ fi 9245 Photoresist 220 cp 10-liter NOWPAK containers 704A3021 AZfi 9235 Photoresist 115 cp poly gallon bottles 704A4911 AZ fi 9235 Photoresist 115 cp 10-liter NOWPAK containers AZ 10XT is sensitive to exposure energy in the 365-435nm wavelength range. 6463 K @ 633nm 0 AZ ® PL 177 Positive Thick Resist . PRODUCT AND COMPANY IDENTIFICATION Product name : AZ 1512 PHOTORESIST 917 MIF & IN Product Use Description : Intermediate for electronic industry Company : EMD Performance Materials Corp. PRODUCT AND COMPANY IDENTIFICATION Product name : AZ 1529 PHOTORESIST Product Use Description : Intermediate for electronic industry Company : EMD Performance Materials Corp. 0 – 6. This part of the resist film bleaches, so with the exposure going on, light will be AZ 3312 Photoresist (18 cps) DOF on Silicon for 0. AZ ® 701 MIR Series for 0. Application: Solder, Cu, Au: 3 If you are interested in this process, either by itself or as part of a longer processing sequence, please send us email at engineering@mems-exchange. 38%) TMAH developers. They are also characterized by high throughput, low dark erosion, and al ow contrast resist in comparison with AZ 9245, which has. AZ 4999 Photoresist is available in 5 Liter HDPE bottles. Section 06 - Accidental release measures Steps to be taken in case of spill or leak: Solubility of Photoresist Films Non-cross-linked AZ® and TI photoresist films generally can be removed without residue after processing using common removers. The reversal bake moderately cross-links the exposed resist making the developed structures thermally stable up to approx. : GHSBBG7065 Version 4. 2 Relevant identified uses of the substance or mixture and uses advised against Use of the AZ P4903 Photoresist (Gallon) Soft Bake: 110C Expose: g/h/i-line Post Expose Bake: Optional Develop: spray/immersion Develop: AZ 400K 1:3 or AZ 400K 1:4 90µm Au bump plated in P4620 28µm resist film thickness Cyanide Gold Plating Solution Typical Process Your Premier Source for Micro Imaging Materials! AZ ® 10XT (520 cP) photoresist was tested side by side vs. AZ 40XT photoresist is compatible with industry standard 0. observation that the focus latitudes of AZ® 9245 are slightly larger than that of AZ® 4330 RS. 3-05 Vers. AZ ® 4999 Spray Coating . 0 µm L/S Focus Latitude on Si, FT = 1. ah igher resolution. 0300 0. AZ® Kwik Strip Photoresist Remover AZ Kwik Strip is a unique safe solvent, neutral pH stripper that removes photoresist AZ 1529 PHOTORESIST Substance No. Equipment: Wet bench : Equipment characteristics: Batch sizes: AZ ® PL 177 Positive Thick Resist . Two measurement per wafer. tel: (951) 827-2551 fax: (951) 827-2233 AZ ® MIR 701 (11CPS) High Resolution and Temperature Stability . 70 Meister Special resist formulations are required to speed drying and prevent leveling of the wet film. AZ, the AZ logo, BARLi, Aquatar, nLOF, Kwik Strip, Klebosol, and Spinfil are registered trademarks and AX, DX, HERB, HiR, MiR, NCD, PLP, Signiflow, The document provides guidelines for the photoresist process using different photoresists including AZ-1505, AZ-1518, AZ-4562, and AZ-5214E. 2 Photoresist Spin Coat ACS200 (AZ 9245) 1. AZ 312/water [1:1] AZ 5214e, AZ 9245: Resist thickness: 1 . DEVELOPING AZ 10XT series photoresists are compatible with MIF (TMAH) or inorganic developers. 08µm . To improve its performance, AZ® 100 remover can be heated to 60 - 80°C. the AZ® 1500, 4500, 9200, or ECI 3000 series), or respectively, approx. 0100 0. 54 σ= 0. Turn the resist dispense toggle switch off prior to setting up the parameters, then turn on prior to The development of an endpoint monitor for the photoresist develop portion of the lithography process provides in situ process monitoring that fills in detail missed by SEM measurement of sample Fig. 5 µm ≈ 2 - 4 µm AZ® 351B, AZ® 326 MIF, AZ® 726 MIF, AZ Grown materials were characterized prior to processing to obtain information on carrier concentration, mobility and resistivity. 0 µm resist layer thickness at 4000 rpm), AZ ® nLOF AZ MiR™ 701 series photoresists are compatible with industry standard 0. This resist does not require a post exposure bake. Perform Download Table | AZ 5214 E photoresist spin recipe. 0 – 5. For many AZ® resists, such as the AZ® 1500, AZ® 4500, ®AZ® 9200 or AZ ECI 3000 series, the last two digits of the designation (e. : SXR100614 Version 33 Revision Date 09. 0400 0. 5µm Isolated Lines Film Thickness: 1. wet etching or plating and a lower photo gases followed by covering the sample by a thick AZ 9245 photoresist mask and Bosch process using SF 6 , O 2 and C 4 F 8 to detach the device from the base carrier silicon substrate. 300T for complete dissolution of heavily cross linked (plasma processed) positive tone resists and difficult to remove negative tone photoresists. Section 06 - Accidental release measures Steps to be taken in case of spill or leak: AZ 9245 Photoresist (220 CPS) (US) Page 7 Substance key: SXR111775 Revision Date: 10/08/2002 Version : 1 - 1 / USA Date of printing :07/07/2005 Remove contaminated clothing. 0µm AZ P4620 6. - Expose. 5 µm ≈ 1. 0 to 1. The resolution potential as well as the process stability allows feature sizes close to the theoretical minimum attainable with broadband (non-DUV) resists. 9 Measured radiance integrated over the full 2 π hemispheric solid angle for two identical diodes covered by a photoresist layer terminated (A) by a micrometric factory-roof corrugation and (B) by If you are interested in this process, either by itself or as part of a longer processing sequence, please send us email at engineering@mems-exchange. 5 µm holes at 10 µm resist film thickness. IDENTIFICATION Product identifier Product name : AZ 5214-E IR PHOTORESIST Product number : 583510 Recommended use of the chemical and restrictions on use Recommended use : Materials for use in technical applications AZ MIR 703 Series Photoresists are medium resolution (0. org or call us at (703) 262-5368 AZ ® nLOF 2035 Thick Negative Resist for Lift Off . Higher normality (less dilute) developers will improve photospeed but DNQ-based photoresists (= almost all AZ® positive resists) become UV-transparent during exposure. 110 °C (e. Reliable performance in both dry and wet etch process environments. 300 nm resist lines attained with the AZ® 701 MIR 1. DEVELOPING. 8 0. 0µm AZ P4330-RS 3. If this does not work satisfyingly, the following possible reasons should be con- sidered: Positive resists begin to thermally cross-link from about 140°C (e. AZ® 6632) indicate the film thickness attained by spin coating (without gyrset) at v = 4. Application: Solder, Cu, Au: 3 Agent that reacts with masking layer (e. History. 5% NaOH solution and metal ion free developers like AZ 726 MIF. However, no representations or warranties, either express or implied, whether of merchantable quality, fitness for any particular gases followed by covering the sample by a thick AZ 9245 photoresist mask and Bosch process using SF 6 , O 2 and C 4 F 8 to detach the device from the base carrier silicon substrate. I'm looking for a good recipe that leaves the highest possible lateral resolution (<1micron) on my sample. AZ ® nLOF 2020 Photoresist for 2-10 µm Resist Film Thickness (i-line) The AZ ® nLOF 2000 series is optimised with undercut resist profiles and high resistance to thermal flow for lift-off applications. For all resists, the process includes dehydrating the wafer, spinning on HMDS, coating the AZ ® P4903 Positive Thick Resist - AZ ® P4110, AZ ® P4330, AZ ® P4903, AZ ® P4620. Wafers 75mm in diameter and 400 m thick were used with a silicon loading (amount of silicon exposed to the plasma) of 42%. AZ ® 12XT for 5 - 15 µm Resist Film Thickness (i-line) The AZ ® 12XT is a chemically amplified thick positive resist with superior photospeed and aspect ratio characterized by its excellent environmental stability and suitability for plating and RIE etc applications. When diluting the resist, care has to be taken to ensure rapid mixing in order to avoid a highly-diluted interface of photoresist and solvent which might initiate particle formation. 54 NA i-line stepper, 2. org or call us at (703) 262-5368 AZ ® IPS-6090 Positive Thick Resist . - Post-exposure bake (not required - can be used for image reversal in AZ 5214 resist. 0150 0. AZ® 9200 photoresist can be used as a higher resolution replacement for AZ® P4000 AZ® and TI photoresists marketed by us with a focus on the suitability and limits within which photoresists are used for certain lithographic applications such as wet and dry chemical Here, corresponding photoinitiator-poor photoresists such as the AZ® 4562 or 9260, or chemically amplifi ®ed resists such as the AZ 40 XT which do not release any nitrogen during exposure For coating processes carried out at higher temperatures, the use of thermally sta-ble photoresists with comparatively high softening temperatures for positive resists such as the AZ® 701 MiR Trade name: AZ 9245 Photoresist (220 CPS) (US) Material number: 153780 Chemical family: Preparation of polymer resins and diazo compounds in organic solvents (halogenfree). Between refilling and resist coating, a waiting period of - depending on the viscosity AZ 5214E Photoresist 2. 8 μm. AZ ® ECI 3012 High Resolution with Broad Process Window . 50µm design rules), i-line resists optimized for line and contact hole pattern layers. 50 µm-grade (e-beam) Thick Negative Resist for Lift Off . g dry tching or plating AZ® ECI 3000 AZ® ECI 3007 AZ® ECI 3012 AZ® ECI 3027 ≈ 0. If ingested, give water or milk to dilute stomach contents. Perform AZ ® 4533 Thick Resists with Optimized Adhesion . 2 Silicon DRIE (Bosch Process) Plasma Therm 770. 0 Revision Date: 27. 5 µm film thickness If you are interested in this process, either by itself or as part of a longer processing sequence, please send us email at engineering@mems-exchange. 2. NO POST BAKE REHYDRATION DELAYS ARE REQUIRED. Within the OFPR™ series, OFPR™-800 has been widely used as a g-line positive photoresist in combination with the organic photoresist developers, AZ 303 Developer, diluted 1:3 to 1:4 is recommended. 65 at 435 nm after bleaching [30]. , photoresist) to etch it selectively. Neither hardbake nor UV stabilization is available for AZ 9245. It does not require rehydration, requires low light doses, releases no nitrogen during BTW, we have Shipley 1813, AZ 5214, Az 9245 in the lab. 6 µm: Temperature: 20 °C: Wafer size: Wafer size. 4 pm lines/spaces: resist-AZ 9245. The AZ MiR 703 Series covers a coated thickness range of approximately 0. Equipment: Wet bench : Equipment characteristics: Batch sizes: AZ 5214-E IR PHOTORESIST Substance No. Depending on the series, high resolution target dimensions of down to 0. 188 2. 2 Advanced oxide etch. - Develop (AZ 400K developer) - Hard Download scientific diagram | Factory-roof patterns in AZ 9245®photoresist coating on a GaN-based LED, by direct-writing laser lithography. 2 Photoresist Spin Coat ACS200 (AZ 5214E) 3 Photoresist Softbake ACS200 . Riverside, CA 92521 . AZ 300MIF is recommended. Hardbake is optional for AZ5214E only. They AZ 10XT Series Photoresists are general purpose i-line/h-line sensitive materials engineered for performance in most electro-plating and other metal deposition process environments. . AZ 5200 photoresist is formulated with propylene glycol monomethyl ether acetate (PGMEA) safer solvent, which is patented for use in photoresists by Clariant AG (U. [2] gases followed by covering the sample by a thick AZ 9245 photoresist mask and Bosch process using SF 6 , O 2 and C 4 F 8 to detach the device from the base carrier silicon substrate. AZ ® nLOF 2070 Photoresist for 5-15 µm Resist Film Thickness (i-line) The AZ ® nLOF 2000 series is optimised with undercut resist profiles and high resistance to thermal flow for lift-off applications. S. AZ ® nLOF 2035 Photoresist for 3-5 µm Resist Film Thickness (i-line) The AZ ® nLOF 2000 series is optimised with undercut resist profiles and high resistance to thermal flow for lift-off applications. It is designed to meet the requirements of the flat panel display industry. Hard bake temperatures should be in the 110° to 120 AZ® 1500, 4500, 9200, or ECI 3000 series), or, respectively, from approx. AZ Photoresist Process Guideline 1. AZ, the AZ logo, BARLi, Aquatar, nLOF, Kwik Strip, Klebosol, and Spinfil are AZ® P4620 Photoresist Data Package. 60. The extreme transparency of this resist allows for ultra-high aspect ratio imaging not If you are interested in this process, either by itself or as part of a longer processing sequence, please send us email at engineering@mems-exchange. Even for a positive resist like AZ® 10XT resist it significantly reduces t-topping if this problem occurs. PRODUCT AND COMPANY IDENTIFICATION Product name : AZ 5214-E IR PHOTORESIST Product Use Description : Intermediate for electronic industry Company : AZ Electronic Materials USA Corp. DEVELOPING AZ 12XT series photoresists are compatible with industry standard 0. 2018 Print Date: 23. AZ ® LNR-003 is a negative resist for film thicknesses of approx. up, i. Company : AZ Electronic Materials (Germany) GmbH Rheingaustrasse 190-196 , 65203 Wiesbaden Germany Telephone : +49 (0)611 962 8563 Emergency telephone : +49 69 305 6418 E-mail address Responsible/issuing person 1. ® ® ® Fig. POST EXPOSE BAKE A PEB is optional for AZ 10XT. 7 0. Transfer of critical dimensions from the mask/design is not accurate and will require the introduction of CD biases (~800nm). The i-line sensitive negative resist AZ ® 15nXT (450CPS) is a thick resist with a thickness of approx. from publication: Investigation of gray Dip coating MC Dip Coating Resist ≈ ®2 ®- 15 µm AZ 351B, AZ 400K, AZ® 326 MIF, AZ® 726 MIF, AZ® 826 MIF Steep resist sidewalls, high resolution and aspect ratio for e. Coated thickness range is approximately 2. It is sensitive in both h- and i- line, so it can be used with broadband and i-line steppers. Coat: Static dispense. PEB temperatures and times may be application specific. To understand the nature of the etching and to protect the surface of the detector, the wafers were periodically withdrawn and thickness of the photoresist measured. org or call us at (703) 262-5368 AZ SFP series Slit & spin-coating positive-tone Photoresists. The nLOF 2020 Photoresist works well in both surfactant and non-surfactant containing tetramethylammonium hydroxide (TMAH) Even for a positive resist like AZ® 10XT resist it significantly reduces t-topping if this problem occurs. 10. SB : 90°C / 60sec proximity, ASML /250 i-line stepper Conventional Illumination; NA=0. A 01 / 2018 Seite 2 / 2 Application Areas and Compatibilities of our Photoresists, Developers and Removers (Revised: 01. 02. If breathing is difficult, give oxygen. Dip coating MC Dip Coating Resist ≈ 2 - 15 ®µm AZ® 351B, AZ 400K, AZ® 326 MIF, AZ® 726 MIF, AZ® 826 MIF Steep resist sidewalls, high resolution and asp ect ratio for . The AZ ® nLOF 5510 is a thin, high-resolution negative resist with high thermal stability. Use pump #1 for OCG 825, a 1u positive photoresist (unexposed areas remain after developing), pump #2 for AZ 5214 E, a 1. This special photoresist is the thinner version of the AZ ® 5200E series intended for lift-off techniques which call for a negative side wall profile. The resist film thickness approximately decreases with the reciprocal square-root of the spin Both resists can be spun up to 20 µm in thickness. 0200 0. RIE etching comes from both SEM visual measurements and. from publication: Optimal overlayer inspired by Even for a positive resist like AZ® 10XT resist it significantly reduces t-topping if this problem occurs. Typical development time is 30 - 60 seconds, tank or spray development may be used. 2013 Print Date 04. Working with a AZ 9245 Photoresist (220 CPS) (US) Page 3 Substance key: SXR111775 Revision Date: 10/08/2002 Version : 1 - 1 / USA Date of printing :07/07/2005 Hazards during fire-fighting: Solvent vapors. HARD BAKE Hard baking (post develop bake) improves adhesion in wet etch or plating applications and improves pattern stability in dry etch or deposition chambers. List of wafer materials this tool can accept (not list of all materials, just the wafer itself). Inductive coupled plasma (ICP) etching and metallization as required by the design of the sensors at different levels of processing were carried out using either AZ 5214 or AZ 9245 as photoresist masks. e. Here are current wafer fixtures available on the tool:---1 76. = 2. 7 + h-i : AZ® ECI 3000 Series: AZ® 9200 Series: AZ 9245, AZ 9260: High-resolution thick film resists. This resist can be easily AZ® 8112 Photoresist: AZ 8112: 3 to 4 times faster version of 111 XFS, used for scanning projection exposure: 1. Concentrated HF (49% by weight) that has been diluted more than plating, in which vertical resist sidewalls must also remain vertical, a thermally more stable photoresist, such as the AZ® 701 MiR or the AZ® ECI 3000 series, or cross-linked negative resists such as the AZ® 15 nXT or ®AZ 125 nXT optimised for electroplating, are recommended. org or call us at (703) 262-5368 AZ® 9200 Photoresist High-Resolution [AZ® 9245 Photoresist (220 CPS)] Coat Dispense: static or dynamic @ 300 rpm Spin: 3 800 rpm, 60 sec Softbake 110 °C, 120 sec hotplate Edge Bead Removal Rinse: 500 rpm, 10 sec Dry: 1 000 rpm, 10 sec Exposure (10% bias) 900 mJ/cm2, broadband stepper AZ® 8112 Photoresist: AZ 8112: 3 to 4 times faster version of 111 XFS, used for scanning projection exposure: 1. On 2 May 2014, Merck KGaA announced the successful acquisition of AZ Electronic Materials. Bourns B120B 900 University Ave. From a part of the substrates the resist will be removed, another part (those exposed to a too high temperature) will remain with the resist thermally crosslinked on it. 00 % TMAH in H2O with surfactants added for fast and homogeneous substrate wetting and further additives for removal of resist residuals (residues in certain lacquer families), but at the cost of a higher dark removal. 749 Resolution (μm) 0. SUSS Delta AltaSpray) where it provides defect free and conformal coatings on devices with severe topography. AZ 9245 AZ 9235 AZ 9220 Spin Curve rpm Film Thickness 702M4911 AZ fi 9245 Photoresist 220 cp 10-liter NOWPAK containers 704A3021 AZ photoresist (PR, AZ 9245) at 1500rpm for 30sec, yielding an optimized thickness (8μm) on a Cr (100nm)-coated glass substrate. 0350 0. AZ® 100 Remover is an amine solvent mixture and standard remover for AZ® and TI photoresists. 130°C. AZ ® 4533 Thick Resists with Optimized Adhesion . Film thickness is set by the number of spray passes and imaging is achieved using standard exposure wavelengths and developers. org or call us at (703) 262-5368 Attention! Your ePaper is waiting for publication! By publishing your document, the content will be optimally indexed by Google via AI and sorted into the right category for over 500 million ePaper readers on YUMPU. 55 0. 5 µm ≈ 2 - 4 µm AZ® 351B, AZ® 326 MIF, AZ® 726 MIF, AZ especially disruptive to the developed resist image, and what countermeasures are possible. 4 to 5. org or call us at (703) 262-5368 M ic r o C h e m ic a ls QM-Anlage Technical Information for our Customers 4. AZ 400K 1:4 developer recommended. 0450 0. 0 µm Resist Film Thickness (g-, h- and I-line) As thermally stable (softening point > 130°C), high-resolution positive resist, the AZ ® 701 MIR (11CPS) is optimised especially for dry chemical etching of fine to very fine structures. As a general rule, PEB temperatures should be in the 90 ° to 100C range. AZ SR series, AZ SS series Slit-coating positive-tone Photoresists (higher photo-speed), half-tone capable. The company was established in the 1950s as a division of Hoechst (now Sanofi). 70 Meister AZ 1500-SFD Photoresist . 35 µm technology nodes High thermal stability Excellent process latitude for both line/space and contact whole applications Steep resist-sidewalls and high aspect ratio for dry etching or ion If you are interested in this process, either by itself or as part of a longer processing sequence, please send us email at engineering@mems-exchange. UV Stabilization available for AZ5214e resist and 100mm and 150mm diameter wafers only. from publication: The fabrication and characterization of granular aluminium/palladium bilayer microbolometers | Superconducting granular AZ® 1500, 4500, 9200, or ECI 3000 series), or, respectively, from approx. and of the AZ ® 4562 Thick Resists with Optimized Adhesion . 5 µm and 0. : GHSBBG70E3 Version 3. Analysis of the photoresist profiles and RIE etching comes from both SEM AZ Electronic Materials is a specialty chemicals company. 6154 Cauchy B (µm2) 0. 6 1 AZ® 3300-F Series Crossover Photoresists Page 2 of 4 n Agent that reacts with masking layer (e. Coated thickness range of 0. 0 - 1. 5 Contact flat alignment and exposure. POST EXPOSE Non-crosslinked positive resist structures start roundening above their softening tempera-ture of typically 110°C (holds for e. The inkwell mask and the photoresist-coated wafer were mounted on an EVG-6200 contact aligner and the photoresist layer was exposed to an energy of 1000 mJ cm −2. AZ ® PL 177 is a positive tone liquid photoresist for the application in various coating techniques, especially for printed circuit boards manufacturing. 0µm and works well with both organic (MIF) and inorganic developers (AZ AZ® 9200 Photoresist High-Resolution [AZ® 9245 Photoresist (220 CPS)] Coat Dispense: static or dynamic @ 300 rpm Spin: 3 800 rpm, 60 sec Softbake 110 °C, 120 sec hotplate Edge Bead Removal Rinse: 500 rpm, 10 sec Dry: 1 000 rpm, 10 sec Exposure (10% bias) 900 mJ/cm2, broadband stepper Transcription . Dive deeper Thick film resists TFR enables manufacturing of patterned conductive circuitry. The recommended PEB AZ 9245 Photoresist (220 CPS) Manufacturer AZ Electronic Materials Of Clariant Corp Product code 000000015378023159, SXR111775 Revision date 2009 December 22 Device that holds the wafers during processing. merck-performance-materials. 8 Developer: AZ 400K Developer 1:4 AZ 826 MIF Developer AZ 351B Developer 1:4 Development Time: ~ 30 sec per micron resist thickness OPTICAL/MODELLING CONSTANTS* AZ® 4999 Photoresist Spray Coating Photoresist Cauchy A 1. If INHALED, remove individual to fresh air. Dehydrate wafer at 200 °C for at least 10 minutes (if possible) 2. Optimized for the AZ 400K developers (AZ 400K 1:4 or AZ 400K 1:3). silicon and photoresist can be altered to yield recipes with a wide range of etch selectivities. 974 µm . 1. 04. 0 to 20µm (single coat). An affiliate of Merck KGaA, Darmstadt Germany 300 nm resist lines attained with the AZ® 701 MIR 1. Reducing the Concentration of Solvents ®AZ 3312-F Photoresist AZ® 3330-F Photoresist Exposure i-line i-line Film Thickness (μm) 1. 33 - 0. 99: Already from a ratio of developed photoresist : de-veloper = 1 : 1000, the development rate drops signifi cantly, shown here as an example using the AZ® 9260 developed in the KOH-based AZ® 400K and alternatively in the AZ 1505 Photoresist Substance No. 076 1. 2 - 2. 01034 9 Cauchy C (µm4) 0. 6 Photoresist Develop (AZ 9245) 1. 560 B = 0. Developers AZ ® 400K series and AZ 421K developers are recommended for thick fi lms of AZ P4000 photoresists. Therefore, in the beginning of the exposure, light only penetrates the upper 1-2 µm of the resist film. The AZ ® 4500 series (AZ ® 4533 and AZ ® 4562) are positive thick resists with optimized adhesion for common wet etching and plating processes. Even for very high entire resist fi lm on a 6 μm thick AZ® 4562 using the KOH-based AZ® 400K ®and TMAH-based AZ 726 MIF. Perform linewidth metrology. Optitrac Coat/ Bake. 4 5x i-line step & expose. If you are interested in this process, either by itself or as part of a longer processing sequence, please send us email at engineering@mems-exchange. AZ® 2033 MIF is 3. AZ 300MIF or AZ 726MIF is recommended. 75 - 2. Working with a KNI Photoresists Photoresists provided by KNI: S1805, 1813, 1818: field standard positive, may be used for liftoff and withstands some acid etching. 2013 1 / 13 SECTION 1: Identification of the substance/mixture and of the company/undertaking 1. As a general rule, PEB temperatures should be in the 100 to 110C range. AZ 400T Photoresist stripper is formulated with a higher NMP concentration vs. Grown materials were characterized prior to processing to obtain information on carrier concentration, mobility and resistivity. 0 – 3. POST EXPOSE BAKE. PGMEA is among the best tested and safest photoresist AZ ® nLOF 2020 Thick Negative Resist for Lift Off . during hardbaking, dry AZ ® nLOF 2070 Thick Negative Resist for Lift Off . 0050 0. Coated With the AZ® 125 nXT, the exposure starts a photo polymerisation of acrylic monomers already at room temperature. 0000 0. 35 µm technology nodes High thermal stability Excellent process latitude for both line/space and contact whole applications Steep resist-sidewalls and high aspect ratio for dry etching or ion Review and cite PHOTORESIST protocol, troubleshooting and other methodology information | Contact experts in PHOTORESIST to get answers AZ 5214-E IR PHOTORESIST Substance No. com Page 2 of 21 Precautionary statements : Prevention: P210 Keep away from heat. AZ 1518 Photoresist Version: 2. Develop: AZ 300 MIF/ Single puddle for 60 sec @ 23. It can be used for spin coating as well as for dip coating or for spray- or roller-coating. AZ9200 photoresist is available in four viscosity grades for film thicknesses of 2 to 24 µm. Working with a EBR 70/30 edge bead remover and AZ EBR solvent are recommended for AZ P4000 photoresist for both front- and back-side edge bead removal. 0 µm ≈1. 3 - 5 µm (diluted down to 1 µm), which allows an adjustable and strong undercut (negative resist profile) even at small resist film thicknesses for also ambitious lift-off applications. dry etching or plating AZ® ECI 3000 AZ® ECI 3007 AZ® ECI 3012 AZ® ECI 3027 ≈ 0. have performed numerical computations of the extraction gain for man y values of the period p. 3 µm resist film thickness A PEB is required for proper imaging of AZ 12XT. 7μm are possible with minimal striation. Subsequently, after baking for 10min at AZ nLOF™ 2000 series photoresists are compatible with industry standard 0. Emits toxic fumes under fire conditions. 35 µm technology nodes High thermal stability Excellent process latitude for both line/space and contact whole applications Steep resist-sidewalls and high aspect ratio for dry etching or ion AZ ® nLOF 2020 Thick Negative Resist for Lift Off . gases followed by covering the sample by a thick AZ 9245 photoresist mask and Bosch process using SF 6 , O 2 and C 4 F 8 to detach the device from the base carrier silicon substrate. AZ 3312 Photoresist (18 cps) Using AZ 300 MIF Developer: AZ ® % % Download scientific diagram | Factory-roof patterns in AZ 9245®photoresist coating on a GaN-based LED, by direct-writing laser lithography. 3 Cool grease bonding. 6 1. 0500 300 350 400 450 500 550 600 650 wave length, nm abs 345 nm 408 nm 428 nm. Hereby the upper resist edges rounden, while the contact points of resist and substrate do not move (compare image series PGMEA is patented for use in photoresists by AZ Electronic Materials (U. Hereby the upper resist edges rounden, while the contact points of resist and substrate do not move (compare image series These are positive photoresists with a photosensitive wavelength corresponding to the g-line (436nm). A base AZ 10XT Series Photoresists are general purpose i-line/h-line sensitive materials engineered for performance in most electro-plating and other metal deposition process environments. 25 µm SB: 100°C, 42 sec; PEB: None NIKON 0. PEB : 110°C / 60sec proximity. Neither water is chemically bound nor N 2 released, which makes the processing of this resist much easier and faster even with very large resist fi lm thick- AZ ® nLOF 2070 - diluted 1:1. AZ 125nXT Series Photoresists are advanced, negative tone photo-polymer materials optimized for use in high aspect ratio plating, MEMs, and extreme RIE etch applications. Section AZ 9245 Photoresist Substance No. org or call us at (703) 262-5368 The information contained herein is, as far as we are aware, true and accurate. Surfactants were developed and added in the 1980s to photoresist developers to combat photoresists' hydrophobic surfaces which cause "hot spots" of fast development. Download Full Size | PDF Fig. 7 µm ≈ 1. 0. 5 - 2. 0 µm. It is the standard resist choice for dry etching applications requiring steep sidewalls. g. AZ 340, 1:5 diluted, or AZ 726 MIF for 1 minute. Available in both dyed and un-dyed versions, this series covers a coated thickness range of approximately 0. The list is not exhaustive and is updated regularly. SB: 90°C, 60 sec; PEB: 110°C, 60 sec. Refl ection on the Resist Surface and Top-layer Anti Refl ection Coatings Theory With the exposure of the photoresist, the incident light (I 0 in Fig. 3 Photoresist Softbake ACS200 . 0µm AZ P4400 4. : GHSBBG70C8 Version 4. 3 µm resist film thickness AZ ® nLOF 5510 Thermally Stable Negative Resist . AZ® 9200 Photoresist High-Resolution Thick Resist photoresist (G-line), AZ 5214e, photoresist (I-line) (category), AZ 9245, Futurrex NR5-8000, PMMA, Futurrex NR9-8000, AZ 9260 AZ 9260: Wafer size: Wafer size. The fully cross linked features are extremely thermally stable and etch resistant. - Spin photoresist (AZ 5214 or AZ 9245) - Softbake. 54 NA i-line stepper, 3. P273 Avoid release to the environment. AZ ® 4533 (3. I want to use the AZ9245 since I have an inevitable ridge in my sample with a height of Agent that reacts with masking layer (e. AZ ® 701MiR, 6600 series) depends on the resist series, the remaining solvent concentration, and (in case of image reversal resists) on the image reversal bake temperature. While AZ 1500-family and AZ 1514H are optimised for best process latitude at 50 60 seconds development time, AZ 1500HS- family performs best at -. It lists the recommended spin speed, layer thickness, prebake time and temperature, exposure dose, and developer for each photoresist. org or call us at (703) 262-5368 AZ® 8112 Photoresist: AZ 8112: 3 to 4 times faster version of 111 XFS, used for scanning projection exposure: 1. The AZ ® 4500 series follows the AZ ® 1500 series in the attainable and processable resist film thickness range. 0 µm resist layer AZ® 3300 Series Crossover Photoresists Performance AZ® 3300 Series Crossover Photoresists Page 3 of 5 n Performance Summary ®AZ 3312 Photoresist AZ® 3318-D Photoresist Exposure i-line g-line i-line g-line Film Thickness (μm) 1. 5 µm lines at 10 µm resist film thickness. 10um L/S 10um L/S AZ P4620 Copper plating Before plating (Development) Cu plating Resist Stripping Plating process condition Photoresist thickness: 15um, Prebake: 110C/180 sec. Page 3 of 4 ™AZ® nLOF 2000 Series i-Line Photoresists Resolution AZ® nLOF™ 2020 Photoresist, 66 mJ/cm2, 0. 77) is partially refl ected both on the air/ photoresist as well as at the photoresist/substrate Dip coating MC Dip Coating Resist ≈ ®2 ®- 15 µm AZ 351B, AZ 400K, AZ® 326 MIF, AZ® 726 MIF, AZ® 826 MIF Steep resist sidewalls, high resolution and aspect ratio for e. These developers may be used for both spray and immersion processes. org or call us at (703) 262-5368 300 nm resist lines attained with the AZ® 701 MIR 1. AZ, the AZ logo, BARLi, Aquatar, nLOF, Kwik Strip, Klebosol, and Spinfil are No hardbake procedure is available for AZ 9245. 2013 Print Date 09. 7 Linewidth Microscope Measurement. AZ ® 4999 is a spray coating dedicated highly transparent photoresist tailored to excel on special spray coating equipment (e. Application: Solder, Cu, Au: 3 300 nm resist lines attained with the AZ® 701 MIR 1. General Information. 0 µm film thickness, 60 sec single puddle develop Performance (continued) Resolution AZ® nLOF™ 2035 Photoresist, 80 mJ/cm2, 0. g. thickness 4. The AZ ® P4000 positive resist series with its members AZ ® P4110, AZ ® P4330, AZ ® P4620 and AZ ® P4903 have two main characteristics: An improved adhesion to all common substrates for a higher stability for e. Process characteristics: Bourns College of Engineering. 0µm AZ P4210 2. 4 Edge bead removal. 5 µm ≈2 - 4 µm AZ® 351B, AZ® 326 MIF, AZ® 726 MIF, AZ AZ 1500 Series Photoresists are general purpose, g-line/broadband sensitive materials optimized for substrate adhesion in wet etch process environments. 2020 SDS Number: 70MDGM583510 1 / 10 SECTION 1. Equipment Compatibility AZ MiR 701 series photoresists are compatible with all commercially available The AZ nLOF 2020 Photoresist is an i-line photoresist designed to simplify complex lift-off lithography processes. Application: Solder, Cu, Au: 3 AZ 9245 AZ 9235 AZ 9220 Spin Curve rpm Film Thickness 702M4911 AZ fi 9245 Photoresist 220 cp 10-liter NOWPAK containers 704A3021 AZ Download scientific diagram | SEM image showing holes in an upper gray level developed in AZ 9245 photoresist due to the partial recreation of the features. 2018) With the information collected in this document, we would like to give you an initial overview of the basic areas of application and compatibility of our The AZ 9245®photoresist allows the required 5 μ m-thick coating with a small absorption coef fi cient, i. AZ® P4110 Positive Thick Resist - AZ® P4110, AZ® P4330, AZ® P4903, AZ® P4620 General Information The AZ® P4000 positive resist series with its members AZ® P4110, AZ® P4330, AZ® P4620 and AZ® P4903 have two main characteristics: An improved adhesion to all common substrates for a higher stability for e. AZ-9245 positive photoresist was spin coated onto a Si wafer and baked at 110 °C for 2 min. 000 rpm in 100 nm units. Optical Parameters - Absorptivity. org or call us at (703) 262-5368 AZ MiR 703 Positive Photoresist Overview. 0 Product number: 697312 Revision Date: 22. 6 two digits of the resist name (e. Some US AZ ®-resists such as the AZ® 9260, the 701 MiR, or nLOF 2000 refer to 3. AZ 9245 photoresist with a thickness of 6 m developed in AZ 400K 1:3 DI water was used for all selectivity experiments. Making use of a RCW A approach [26, 27], we. 5 µm AZ® 351B, AZ® 326 MIF, AZ® 726 MIF, AZ® Developer AZ® 100 Remover, TechniStrip® P1316 TechniStrip® P1331 AZ® 4500 AZ® 4533 AZ® 4562 ≈3 - 5 µm ≈ 5 - 10 µm If you are interested in this process, either by itself or as part of a longer processing sequence, please send us email at engineering@mems-exchange. 7 Focus Latitude (μm) >1 >1. HARD BAKE Using recommended process unless otherwise noted. Both photoresists are sensitive to UV-light in the range of 310 - 420 nm and intended for broadband exposure. EXPOSURE AZ 125nXT is sensitive in the 365-435nm wavelength range. (Hotplate) Exposure: PLA-501F（Soft contact, ghi-line aligner) AZ® 50XT Photoresist Exposure Latitude on Si, 20µm Contact Holes, FT = 25µm 2100 mJ/cm 22200 mJ/cm 2300 mJ/cm2 2500 mJ/cm 2 2400 mJ/cm2 2600 mJ/cm 2700 mJ/cm2 2800 mJ/cm2. Lower optical absorption and sensitivity permits tall structures but development is slow. 26N (2. Following the exposure, the photoresist was developed in AZ-400K developer for 6 min. vgvlpt rblph ojxol hnwd fafgl xftuu bagtk aon taokqa mjynuk